| PART |
Description |
Maker |
| M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYMP125S64CR8-C4 HYMP125S64CR8-S5 HYMP125S64CR8-S6 |
256M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
64M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
1200pin Unbuffered DDR2 SDRAM SO-DIMMs
|
HYNIX SEMICONDUCTOR INC
Hynix Semiconductor, Inc.
http://
|
| M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| KMM466F404BS2-L |
4M X 64 DRAM SODIMM
|
Samsung Semiconductor
|
| KMM466F203CS2 KMM466F213CS2 |
2M x 64 DRAM SODIMM(2M x 64 ?ㄦ?RAM妯″?)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYM5V64834ASLTZG-60 HYM5V64834ASLTZG-50 HYM5V64834 |
8M X 64 EDO DRAM MODULE, 50 ns, DMA144 SODIMM-144
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Hynix Semiconductor, Inc.
NXP Semiconductors N.V.
|
| HYM71V8M635ALT6-H HYM71V8M635ALT6-K HYM71V8M635AT6 |
8M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144 SODIMM-144
|
Hynix Semiconductor, Inc.
|
| MSC23CV23218D-60BS4 |
2M X 32 FAST PAGE DRAM MODULE, 60 ns, DMA72 PLASTIC, SODIMM-72
|
Oki Electric Industry Co., Ltd.
|
| HYM71V8M755HCFU6-S |
8M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144 MICRO, SODIMM-144
|
Hynix Semiconductor, Inc.
|
| HMP451S6MMP8C-S6 HMP451S6MMP8C-Y5 |
DDR DRAM MODULE, ZMA200 ROHS COMPLIANT, SODIMM-200
|
Hynix Semiconductor, Inc.
|
| HYMP532U64CP6-Y5 HYMP512U64CP8-C4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA240 ROHS COMPLIANT, SODIMM-240
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA240
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| MT18VDDF12872HY-335XX MT18VDDF12872HG-265 MT18VDDF |
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA200
DDR SDRAM SODIMM
|
Micron Technology
|
